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Experimental Study of the Re-Emission During Thin Film Etching in the Outside the Electrodes Discharge Plasma

Podlipnov, V., Kolpakov, V.

Abstract. The article presents the results of Cr-SiO2 structure of the etching plasma high-voltage gas discharge in CF4 + O2 medium at a discharge current of 80 mA, voltage 1.2 kV and duration of the bombardment of the surface under study and 5-minutes. Detected sputtering deposition products within the windows in the mask in the chromium mode 1.2 kV, 80 mA. The deposited products formed a coating of vertically oriented pyramidal clusters. The images of scanning electron microscopy (SEM) are represented. Results of a study of the Raman spectra are presented. The results showed that the deposited film is a kind of compounds Cr2NOx.

Keywords: diffusion, ion-electron beam particles, annealing, pickling, reprecipitation, chromium, metal mask, chromium nitride, chromium oxide

GOST 7.1-2003 citation for works in English:Цитирование по ГОСТ 7.1-2003 для работ на английском языке:
Podlipnov, V., Kolpakov, V. Experimental study of the re-emission during thin film etching in the outside the electrodes discharge plasma // Instrumentation Engineering, Electronics and Telecommunications – 2016 : Proceedings of the II International Forum (Izhevsk, Russia, November 23–25, 2016). – Izhevsk : Publishing House of Kalashnikov ISTU, 2017. – Pp. 81–85.

GOST 7.1-2003 citation for works in Russian:Цитирование по ГОСТ 7.1-2003 для работ на русском языке:
Podlipnov, V., Kolpakov, V. Experimental study of the re-emission during thin film etching in the outside the electrodes discharge plasma // Приборостроение, электроника и телекоммуникации – 2016 : Сб. ст. II Междунар. форума (г. Ижевск, 23–25 ноября 2016 г.). – Ижевск : Изд-во ИжГТУ имени М. Т. Калашникова, 2017. – С. 81–85.

APA v6 сitation:Цитирование в формате APA v6:
Podlipnov, V., & Kolpakov, V. (2017). Experimental study of the re-emission during thin film etching in the outside the electrodes discharge plasma. In Instrumentation Engineering, Electronics and Telecommunications – 2016. Proceedings of the II International Forum (pp. 81–85). Izhevsk, Russia : Publishing House of Kalashnikov ISTU.

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